All parameters describing one silicon strip sensor layer. More...

#include <SiStripDigitizer.h>

Public Attributes
double	thickness {0.0}
	Sensor thickness [mm]. Must be set from the geometry before use.

double	sense_pitch {SENSE_PITCH_MM}
	Sense (inner) electrode pitch [mm].

double	readout_pitch {READOUT_PITCH_MM}
	Readout strip pitch [mm]. Must be an integer multiple of sense_pitch.

double	bias_voltage {BIAS_VOLTAGE_V}
	Applied reverse-bias voltage [V].

double	depletion_voltage {DEPLETION_VOLTAGE_V}
	Full-depletion voltage [V].

double	temperature {TEMPERATURE_K}
	Operating temperature [K].

double	noise_electrons {NOISE_ELECTRONS}
	Electronic noise sigma [electrons ENC].

double	threshold_electrons {THRESHOLD_ELECTRONS}
	Readout threshold [electrons]. Strips below this are suppressed.

bool	is_n_type {true}
	true = n-type bulk; false = p-type bulk. LDMX (and HPS) use n-type bulk.

bool	electron_side_readout {false}
	Simulate and read out the electron-collection side (n-strips).

bool	hole_side_readout {true}
	Simulate and read out the hole-collection side (p-strips / backplane).

double	electron_lorentz_tangent {0.0}
	tan(θ_Lorentz) for electrons. Sign encodes U-shift direction.

double	hole_lorentz_tangent {0.0}
	tan(θ_Lorentz) for holes.

double	trapping {0.0}
	Charge-trapping fraction lost per 100 µm of drift.

double	deposition_granularity {0.10}
	Adaptive segmentation granularity: max U-step as fraction of sense_pitch.

int	n_segments_min {5}
	Minimum number of track sub-segments (used when the track is close to normal incidence so the adaptive formula gives a very small count).

int	n_readout_strips {N_READOUT_STRIPS}
	Total number of readout strips.

double	readout_transfer_efficiency {READOUT_TRANSFER_EFFICIENCY}
	AC-coupling transfer efficiency from a paired sense strip (physically under a readout strip, even index within its group) to its readout strip.

double	sense_transfer_efficiency {SENSE_TRANSFER_EFFICIENCY}
	AC-coupling transfer efficiency from an unpaired sense strip (between two readout strips, odd index within its group) to each of its two adjacent readout strips.

Detailed Description

All parameters describing one silicon strip sensor layer.

Definition at line 66 of file SiStripDigitizer.h.

Member Data Documentation

◆ bias_voltage

double tracking::digitization::SiStripDigitizer::SensorParams::bias_voltage {BIAS_VOLTAGE_V}

Applied reverse-bias voltage [V].

Definition at line 74 of file SiStripDigitizer.h.

74{BIAS_VOLTAGE_V};

Referenced by tracking::digitization::SiStripDigitizer::diffusionSigma().

◆ depletion_voltage

double tracking::digitization::SiStripDigitizer::SensorParams::depletion_voltage {DEPLETION_VOLTAGE_V}

Full-depletion voltage [V].

Definition at line 76 of file SiStripDigitizer.h.

76{DEPLETION_VOLTAGE_V};

Referenced by tracking::digitization::SiStripDigitizer::diffusionSigma().

◆ deposition_granularity

double tracking::digitization::SiStripDigitizer::SensorParams::deposition_granularity {0.10}

Adaptive segmentation granularity: max U-step as fraction of sense_pitch.

Number of segments = max(n_segments_min, ceil(|path_length · dir_u| / (granularity · sense_pitch))).

Definition at line 102 of file SiStripDigitizer.h.

102{0.10};

Referenced by tracking::digitization::SiStripDigitizer::adaptiveNSegments().

◆ electron_lorentz_tangent

double tracking::digitization::SiStripDigitizer::SensorParams::electron_lorentz_tangent {0.0}

tan(θ_Lorentz) for electrons. Sign encodes U-shift direction.

Definition at line 92 of file SiStripDigitizer.h.

92{0.0};

Referenced by tracking::digitization::SiStripDigitizer::computeStripCharges().

◆ electron_side_readout

bool tracking::digitization::SiStripDigitizer::SensorParams::electron_side_readout {false}

Simulate and read out the electron-collection side (n-strips).

Definition at line 86 of file SiStripDigitizer.h.

86{false};

Referenced by tracking::digitization::SiStripDigitizer::computeStripCharges().

◆ hole_lorentz_tangent

double tracking::digitization::SiStripDigitizer::SensorParams::hole_lorentz_tangent {0.0}

tan(θ_Lorentz) for holes.

Definition at line 94 of file SiStripDigitizer.h.

94{0.0};

Referenced by tracking::digitization::SiStripDigitizer::computeStripCharges().

◆ hole_side_readout

bool tracking::digitization::SiStripDigitizer::SensorParams::hole_side_readout {true}

Simulate and read out the hole-collection side (p-strips / backplane).

Definition at line 88 of file SiStripDigitizer.h.

88{true};

Referenced by tracking::digitization::SiStripDigitizer::computeStripCharges().

◆ is_n_type

bool tracking::digitization::SiStripDigitizer::SensorParams::is_n_type {true}

true = n-type bulk; false = p-type bulk. LDMX (and HPS) use n-type bulk.

Definition at line 84 of file SiStripDigitizer.h.

84{true};

Referenced by tracking::digitization::SiStripDigitizer::computeStripCharges().

◆ n_readout_strips

int tracking::digitization::SiStripDigitizer::SensorParams::n_readout_strips {N_READOUT_STRIPS}

Total number of readout strips.

Strip index 0 is at the most-negative U edge; strip N−1 at the most-positive edge.

Definition at line 108 of file SiStripDigitizer.h.

108{N_READOUT_STRIPS};

Referenced by tracking::digitization::SiStripDigitizer::senseToReadout().

◆ n_segments_min

int tracking::digitization::SiStripDigitizer::SensorParams::n_segments_min {5}

Minimum number of track sub-segments (used when the track is close to normal incidence so the adaptive formula gives a very small count).

Definition at line 105 of file SiStripDigitizer.h.

105{5};

Referenced by tracking::digitization::SiStripDigitizer::adaptiveNSegments().

◆ noise_electrons

double tracking::digitization::SiStripDigitizer::SensorParams::noise_electrons {NOISE_ELECTRONS}

Electronic noise sigma [electrons ENC].

Definition at line 80 of file SiStripDigitizer.h.

80{NOISE_ELECTRONS};

Referenced by tracking::digitization::SiStripDigitizer::applyNoiseAndThreshold().

◆ readout_pitch

double tracking::digitization::SiStripDigitizer::SensorParams::readout_pitch {READOUT_PITCH_MM}

Readout strip pitch [mm]. Must be an integer multiple of sense_pitch.

Definition at line 72 of file SiStripDigitizer.h.

72{READOUT_PITCH_MM};

Referenced by tracking::digitization::SiStripDigitizer::senseToReadout().

◆ readout_transfer_efficiency

double tracking::digitization::SiStripDigitizer::SensorParams::readout_transfer_efficiency {READOUT_TRANSFER_EFFICIENCY}

AC-coupling transfer efficiency from a paired sense strip (physically under a readout strip, even index within its group) to its readout strip.

Definition at line 112 of file SiStripDigitizer.h.

112{READOUT_TRANSFER_EFFICIENCY};

Referenced by tracking::digitization::SiStripDigitizer::senseToReadout().

◆ sense_pitch

double tracking::digitization::SiStripDigitizer::SensorParams::sense_pitch {SENSE_PITCH_MM}

Sense (inner) electrode pitch [mm].

Definition at line 70 of file SiStripDigitizer.h.

70{SENSE_PITCH_MM};

Referenced by tracking::digitization::SiStripDigitizer::adaptiveNSegments(), tracking::digitization::SiStripDigitizer::computeCarrierCharges(), and tracking::digitization::SiStripDigitizer::senseToReadout().

◆ sense_transfer_efficiency

double tracking::digitization::SiStripDigitizer::SensorParams::sense_transfer_efficiency {SENSE_TRANSFER_EFFICIENCY}

AC-coupling transfer efficiency from an unpaired sense strip (between two readout strips, odd index within its group) to each of its two adjacent readout strips.

Applied to both neighbours independently.

Definition at line 116 of file SiStripDigitizer.h.

116{SENSE_TRANSFER_EFFICIENCY};

Referenced by tracking::digitization::SiStripDigitizer::senseToReadout().

◆ temperature

double tracking::digitization::SiStripDigitizer::SensorParams::temperature {TEMPERATURE_K}

Operating temperature [K].

Definition at line 78 of file SiStripDigitizer.h.

78{TEMPERATURE_K};

Referenced by tracking::digitization::SiStripDigitizer::diffusionSigma().

◆ thickness

double tracking::digitization::SiStripDigitizer::SensorParams::thickness {0.0}

Sensor thickness [mm]. Must be set from the geometry before use.

Definition at line 68 of file SiStripDigitizer.h.

68{0.0};

Referenced by tracking::digitization::SiStripDigitizer::computeCarrierCharges(), tracking::digitization::SiStripDigitizer::computeStripCharges(), tracking::digitization::SiStripDigitizer::diffusionSigma(), and tracking::digitization::SiStripDigitizer::setThickness().

◆ threshold_electrons

double tracking::digitization::SiStripDigitizer::SensorParams::threshold_electrons {THRESHOLD_ELECTRONS}

Readout threshold [electrons]. Strips below this are suppressed.

Definition at line 82 of file SiStripDigitizer.h.

82{THRESHOLD_ELECTRONS};

Referenced by tracking::digitization::SiStripDigitizer::applyNoiseAndThreshold().

◆ trapping

double tracking::digitization::SiStripDigitizer::SensorParams::trapping {0.0}

Charge-trapping fraction lost per 100 µm of drift.

0.0 for unirradiated; ~0.2 is typical at 1×10¹⁵ n_eq/cm².

Definition at line 98 of file SiStripDigitizer.h.

98{0.0};

Referenced by tracking::digitization::SiStripDigitizer::computeCarrierCharges().

The documentation for this struct was generated from the following file:

Tracking/include/Tracking/Digitization/SiStripDigitizer.h

Public Attributes

Detailed Description

Member Data Documentation

◆ bias_voltage

◆ depletion_voltage

◆ deposition_granularity

◆ electron_lorentz_tangent

◆ electron_side_readout

◆ hole_lorentz_tangent

◆ hole_side_readout

◆ is_n_type

◆ n_readout_strips

◆ n_segments_min

◆ noise_electrons

◆ readout_pitch

◆ readout_transfer_efficiency

◆ sense_pitch

◆ sense_transfer_efficiency

◆ temperature

◆ thickness

◆ threshold_electrons

◆ trapping