CDFSiSensorSim.h

#pragma once
 
#include <map>
 
#include "Acts/Definitions/Algebra.hpp"
#include "Tracking/Digitization/ChargeCarrier.h"
#include "Tracking/Digitization/SiElectrodeDataCollection.h"
 
namespace tracking {
namespace digitization {
 
class CDFSiSensorSim {
  // Static parameters - not intended to be user modifiable
 
  // 10% of pitch or depleted thickness
  // static double deposition_granularity_   = 0.10;
  // static double distance_error_threshold_ = 0.001;
 
  // Field
  // SiSensor _sensor = null;
 
  CDFSiSensorSim();
 
  /*
 
  void setTrapping(double trapping) {trapping_ = trapping;}
 
  // Get charge map on electrodes
  // TODO::Add check that the carrier exists in the internal map
  SiElectrodeDataCollection getReadoutData(ChargeCarrier carrier) {
    return readout_data.get(carrier);
  }
 
  // Simulate charge deposition
  std::map<ChargeCarrier, SiElectrodeDataCollection> computeElectrodeData();
  */
 
 private:
  std::map<ChargeCarrier, Acts::Vector3> _drift_direction;
  std::map<ChargeCarrier, SiElectrodeDataCollection> _sense_data;
  std::map<ChargeCarrier, SiElectrodeDataCollection> _readout_data;
 
  // Simple simulation of charge trapping, this is a temporary kludge.
  // Charge collection efficiency with linear drift distance dependence.
  // Input is fraction lost per 100um drift: 0.2 is typical for 1E15 NEQ.
  // FIXME: should be calculated from properties of DopedSilicon (radiation
  // dose)
 
  double trapping_{0.0};
 
  bool debug_{false};
};
 
}  // namespace digitization
}  // namespace tracking